Methods and Structures for Rapid Switching Between Different Process Gases in an Inductively-Coupled Plasma (ICP) Ion Source

ABSTRACT

An openable gas passage provides for rapid pumpout of process or bake out gases in an inductively coupled plasma source in a charged particle beam system. A valve, typically positioned in the source electrode or part of the gas inlet, increases the gas conductance when opened to pump out the plasma chamber and closes during operation of the plasma source.

TECHNICAL FIELD OF THE INVENTION

The present invention relates to methods and structures enabling rapidswitching between different process gases when using aninductively-coupled plasma (ICP) ion source in a focused ion beam (FIB)system.

BACKGROUND OF THE INVENTION

Focused ion beam systems are used in a variety of applications inintegrated circuit manufacturing and nanotechnology to create and altermicroscopic and nanoscopic structures. Focused ion beams can use avariety of sources to produce ions. Liquid metal ion sources can providehigh resolution, that is, a small spot size, but typically produce a lowcurrent and are limited in the types of ions available. The differention species have different properties, which make some ion species morepreferable than others for specific applications. For example, whereashelium ions are useful for imaging or light polishing, xenon ionsprovide higher milling rates that are useful for bulk processing. Plasmaion sources can produce ions of many different species and at largercurrents, but often cannot be focused to as small a spot.

Plasma ion sources ionize gas in a plasma chamber and extract ions toform a beam that is focused on a work piece. Many different types ofgases can be used in a plasma ion source to provide different species ofions. As ions are extracted from the plasma source to form the beam, thegas in the plasma must be replenished to maintain the plasma. Typicallya gas inlet for a plasma ion source has a small opening through whichgas is supplied to maintain the pressure in the plasma chamber. Becausethe gas is used very slowly, the small opening to replenish the gas isvery small. When a user desires to change the gas in the plasma chamberto form a beam from a different ion species, it can take up to 30minutes to remove one gas and fill the chamber with a second gas. Thisis an unacceptably long time for many applications that process a workpiece sequentially using different process gases.

FIG. 1 shows a typical prior art inductively coupled plasma source 100for use with a focused ion beam system such as the one described in U.S.patent application Ser. No. 12/373,676 for a “Multi-source PlasmaFocused Ion Beam System,” which is assigned to the assignees of thepresent application and is hereby incorporated by reference. Gas isprovided to a plasma chamber 102 within a source tube 103 from anexternal gas feed line 104 through a gas filter 106 and then to acapillary tube 108 with a flow restriction 110. Energy is fed into theplasma chamber 102 from RF power supply 113 by antenna coils 114 andions are extracted through a source electrode aperture 116 in a sourceelectrode 118 by extractor electrode 120. The gas conductance into andout of the plasma chamber 102 is through the flow restriction 110 in thecapillary tube (at the top of the source tube 103) and the aperture 116(typically 175 μm in diameter) in the source electrode 118. Pump 122connected to gas supply line 104 through valve 123 removes gas fromplasma chamber 102 through capillary 108 and gas supply line 104. An ioncolumn pump (not shown) extracts gas from plasma chamber 102 throughsource electrode aperture 116. Multiple gas sources such as gas storage130A, gas storage 130B, gas storage 130C and gas storage 130D supply gasinto gas supply line 104. A beam voltage supply 132 supplies a highvoltage to the plasma in chamber 102 and an extraction voltage supply134 supplies a voltage to extraction electrode 120. Extracted ions orelectrons are focused by focusing electrode 136. Additional details ofthe focusing column and sample chamber are not shown.

To remove a gas from the interior of the plasma chamber, the gas feedline 104 itself may be pumped as shown to remove gas in the source tubeabove the flow restriction 110 in the capillary tube 108. The volume ofthe FIB system below the source electrode 118 may also be adequatelypumped using the main chamber vacuum pump(s) (not shown).

Because both the source electrode aperture 116 and the flow restrictor110 have small diameters and correspondingly very low gas conductances,it is impossible to rapidly pump out the interior of the source tube103. This is a disadvantage, especially for a production FIB system.First, it may take a much longer time to pump out a first process gasfrom the source tube 103 before the base pressure is low enough tointroduce a second process gas. Insufficient purging of the gas can leadto contamination of the plasma through ionization

Second, it may take a long time, during bakeout, to pump awaycontaminants which are thermally desorbed from the interior walls of thesource tube 103.

What is needed is an ion source for a focused ion beam system thatprovides for rapid changes of gas.

SUMMARY OF THE INVENTION

An object of the invention is to provide a method and apparatus forallowing the rapid changing of process gases or purging of contaminationin a plasma source for a focused ion beam column.

In accordance with a preferred embodiment, the plasma ion sourceincludes a switchable gas conductance so that the conductance can beoptimized at a low level for operation and then increased to allow rapidswitching of the gas in the plasma chamber. A valve opens an alternategas path for rapid removal of the gas in the plasma chamber and thencloses off the alternate gas path for normal operation.

The foregoing has outlined rather broadly the features and technicaladvantages of the present invention in order that the detaileddescription of the invention that follows may be better understood.Additional features and advantages of the invention will be describedhereinafter. It should be appreciated by those skilled in the art thatthe conception and specific embodiments disclosed may be readilyutilized as a basis for modifying or designing other structures forcarrying out the same purposes of the present invention. It should alsobe realized by those skilled in the art that such equivalentconstructions do not depart from the spirit and scope of the inventionas set forth in the appended claims.

BRIEF DESCRIPTION OF THE DRAWINGS

For a more thorough understanding of the present invention, andadvantages thereof, reference is now made to the following descriptionstaken in conjunction with the accompanying drawings, in which:

FIG. 1 shows a prior art Inductively-coupled Plasma (ICP) Ion Sourcehaving fixed source electrode and gas capillary tube;

FIG. 2 shows an embodiment of an ICP source of the present inventionhaving a moveable structure in the closed (down) position;

FIG. 3 shows the ICP source of FIG. 2 having a moveable structure in theopen (up) position;

FIG. 4 shows another embodiment of an ICP source of the presentinvention having a capillary assembly pushed down to enable gas feed tothe source tube of the ICP ion source and an o-ring 402 sealing thecapillary assembly;

FIG. 5 shows the ICP source of FIG. 4 having a capillary assembly pulledup to enable pumping out of the source tube and gas feed manifold;

FIG. 6 shows another embodiment of an ICP source of the presentinvention having a capillary assembly with a labyrinth seal;

FIG. 7 shows another embodiment of an ICP source of the presentinvention having a modified source tube and capillary assembly to besealed by an o-ring or labyrinth;

FIG. 8 shows the ICP source of FIG. 7 having a retracted capillaryassembly to enable pumping out of the source tube and gas feed manifold;and

FIG. 9 shows a flow chart showing the method of evacuating a process gasfrom an ICP ion source system.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

The present invention comprises several methods and correspondingstructures to enable relatively rapid switching between process gases inan ICP ion source.

A preferred system has two selectable configurations: 1) a plasmageneration configuration in which the pumping speed is low, and 2) asource tube pump-out configuration in which the pumping speed is muchhigher, enabling the source tube to be pumped out into either the mainvacuum chamber or the gas feed manifold in a matter of seconds.Embodiments of the invention provide an alternate gas path and amoveable structure to expose or seal the alternate gas path. By“alternate gas path” is meant a gas path that is not through the sourceelectrode aperture or the inlet flow restrictor,

This is accomplished in some embodiments by a modification to the ICPion source in which either the source electrode functions as a gas ventor the capillary assembly functions as a poppet valve. By poppet valveis meant a valve that displaces axially, that is, perpendicular to ahole that is uncovered by the valve. Some embodiments employ a sourceelectrode structure that can bias the plasma and also include sealableholes to act as a gas vent valve for the interior of the plasma chamber.In other embodiments, a vertically-movable capillary assembly mountedwithin a plasma chamber functions as a moveable structure to open orclose venting passages. Either of these embodiments may be implementedin a prior art ion source with minimal additional cost or complication.

In an embodiment in which the gas is pumped out from the plasma chamberthrough the main vacuum chamber, one or more holes in the sourceelectrode or in a structure at the same end of the plasma chamber as thesource electrode, is sealed by a moveable structure for normal plasmachamber operation. To create a seal during times of plasma production,the source electrode in some embodiments is modified to contain a guidering upon which a moveable structure may sit. In addition to the guidering, the source electrode can have through holes to provide the desiredalternative function of a vent valve.

In other embodiments, a valve including moveable structure at the sameend of the plasma chamber as the gas inlet moves to expose or seal a gaspath to a gas line pump. The moveable structure preferably includes thecapillary assembly through which gas enters the chamber during normaloperation. In several embodiments, the seal between the moveable memberand the source electrode or other portion of the plasma chamber can beachieved using a labyrinth seal, an o-ring seal, or other seal.

FIGS. 2 and 3 show a plasma source 200 having a valve 202 thatselectively increases the gas conductance for purging a plasma chamber204, or decreases the gas conductance for operating with a plasma in theplasma chamber 204. FIG. 2 shows the plasma source 200 with the valve202 closed, that is, in the operating position. FIG. 3 shows the plasmasource 200 with the valve 202 open, that is, in the position for rapidlypumping gas out of the plasma chamber 204. A circular guide ring 210with an angled “lead” guides a moveable structure 214 or poppet valvedown to the upper (sealing) surface 216 of the source electrode 218,which now has multiple through holes 220 leading from the interior ofthe source tube 103 to the chamber below the source electrode 218. InFIG. 2, the moveable structure 214 is positioned in contact with theupper surface 216 of the source electrode, providing an adequate seal tomaintain the required gas pressure within the source tube 103 for plasmageneration. Since the gas pressure in the plasma chamber 204 isgenerally less than 1 Torr (1.3 mbar), and the chamber pressure belowthe source electrode 218 is orders of magnitude lower, there is verylittle gas pressure on either side of the moveable structure 214, and inany case, what residual gas pressure exists will tend to push down onthe moveable structure 214 making a better seal against surface 216.

FIG. 3 shows plasma source 200 with moveable structure 214 in its upperposition, uncovering the through holes 220 in the source electrode 218.Raising moveable structure 214 provides additional gas conductance fromthe plasma chamber 204 to the main chamber since the additionalconductance through holes 220 is much higher than the conductance of thecenter hole 116 in the source electrode 218 (not shown to scale in FIGS.1-8). Arrows 222 show the gas flow through holes 220 and into the ionfocusing column for removal by the system vacuum pump. Several differentmethods may be used for moving the moveable structure 214. In someembodiments, the device uses electrostatic repulsion of the moveablestructure 214 from the source electrode 218 due to the application of ahigh voltage from beam voltage supply 132 and/or the extraction voltagesupply 134. In another embodiment, magnetic attraction upwards may beused due to induced eddy currents in the moveable structure 214 arisingfrom the RF magnetic fields emanating from the RF antenna 114. Theseeddy currents are then attracted upwards along the B-field gradient(toward higher B-fields). In yet another embodiment, a push rod may beused to mechanically lift and lower the moveable structure 214. As thepush rod (not shown) extends upwards from the chamber volume below thesource electrode 218 and passes through an opening in the plasma chamber204, it will exert an upward force on the moveable structure 214,thereby lifting it off the source electrode 218 to the open positionillustrated in FIG. 3.

Although FIG. 3 shows the moveable structure lifted up uniformly, i.e.,still oriented horizontally as it was in FIG. 2, all that is necessaryfor adequate pumping is for the moveable structure to be lifted up, anda tilting mechanism will work as well as a vertical lift mechanism, justas long as the vacuum seal between the bottom surface of the moveablestructure 214 and the upper surface 216 of the source electrode 218 isbroken. Also note that there is no requirement for precisely locatingthe moveable structure 214 since it has no optical function—precisealignment of the hole 116 in the (fixed) source electrode 218 is stillrequired as it was for the prior art ICP ion source 100 in FIG. 1. Ifthe source electrode 218 is brazed or permanently attached to the plasmachamber, then the moveable structure 214 must already be inside theplasma chamber 204 prior to brazing (i.e., loose inside). The hole doesnot need to be in the source electrode itself—the hole should lead to apath connecting to a vacuum pump. For example, the hole could be in anelectrode support or other structure as long as the hole leads betweenthe interior of the plasma chamber 204 and the ion optical column.

FIGS. 4 and 5 show another embodiment comprising a plasma source 400having a valve 402 that selectively increases the gas conductance forpurging a plasma chamber 404 or decreases the gas conductance foroperating with a plasma in the plasma chamber 404. FIG. 4 shows theplasma source 400 with the valve 402 closed, that is, in the operatingposition. FIG. 5 shows the plasma source 400 with the valve 402 open,that is, in the position for rapid pumping gas out of the plasma chamber404. The arrows show the flow of gas out of the plasma chamber 404 forpurging.

In the embodiment of FIG. 4, the gas is vented through the same end ofthe plasma chamber 404 from which the gas enters by moving a capillaryassembly 410 upwards to open a gap 502 surrounding the capillaryassembly 410 as illustrated in FIG. 5. In FIG. 4, the valve 402 is shownclosed, with capillary assembly 410 positioned and sealed against ano-ring 412 on a counterbore 414 in plasma tube 416 to seal the capillaryassembly. With the capillary assembly 410 in this lower position, theplasma chamber 404 can be filled with the process gas through the flowrestriction 418 in the capillary tube 419 in capillary assembly 410. RFpower is then applied by RF power supply 113 to the RF antenna 114 toexcite plasma within the plasma chamber 404. A rod 420 is attached tocapillary assembly 410 to lift o-ring 412 off of counterbore 414.Actuation of valve 402, that is, lifting of capillary assembly 410, maybe performed manually, or using a solenoid, pneumatic actuator, or othermeans. A bellows 422 seals the portion of rod 420 that extend frominterior regions of the source.

In FIG. 5, the capillary assembly 410 is shown being mechanically pulledup to open a circular vent channel 504 around the capillary assemblythrough which process gases and desorbed gas (during bakeout) may passupwards from the source tube interior, through gap 502, to eventually bepumped out through the gas feed/pump-out line 104 through valve 123 bypump 122 as shown. Some gas is also pumped through the hole 116 in thesource extractor electrode 218 and out of the system by the column pumpsystem (not shown).

FIG. 6 shows a charged particle beam system having a plasma source 600,similar to that of FIG. 5, but employing a labyrinth seal 602 betweenthe capillary assembly 410 and the source tube 416, instead of ano-ring. A labyrinth seal 602 eliminates the o-ring, which can sufferchemical or mechanical damage which can cause leakage into the sourcetube 416 during plasma generation. A labyrinth seal 602 may allow moregas leakage because the contact surfaces of the capillary assembly 410and the plasma source tube 416 are harder than o-rings. Becauselabyrinth seal 602 seals between the environment of gas supply line 104and the plasma chamber 404, a leak in the valve is acceptable if it issmall compared to the gas flow through the flow restrictor 418. Ifdesired, the small amount of gas leakage through labyrinth seal 602 canbe calibrated and the size of flow restrictor 418 adjusted tocompensate, so that the total conductance between gas supply line 104and plasma chamber 404 remains the same. In some embodiments, capillarytube 419 can be eliminated, and all gas can enter the plasma chamberthrough the calibrated labyrinth seal.

FIGS. 7 and 8 illustrate the two operating modes of a third embodimentof the invention—FIG. 7 shows the FIB system configured for plasmageneration, while FIG. 8 shows the same FIB system configured for rapidpump out of the source tube. For this third embodiment, as for thesecond embodiment, the plasma chamber 704 is pumped out through the endof the plasma tube 706 at which the gas enters. In this case, acapillary tube assembly 710 automatically positions itself in either theupper or lower position, depending on the operating mode. Duringpumpout, a spring 712 lifts capillary assembly 710 off of source tube706 opening a seal 714. For plasma generation (FIG. 7), the capillarytube assembly 710 is pressed downwards against the spring force by theprocess gas, which is typically at pressures >200 Torr (270 mbar) abovethe capillary tube assembly 710. In the example shown, an o-ring 720 isused to seal the capillary assembly 710 against the source tube 706. Alabyrinth seal as shown in FIG. 6 or other type of openable and closableseal may be employed. The source tube 706 and the capillary assembly 710have mating conical surface such that the capillary assembly 710 sitsflush with the source tube 706 when the assembly 710 is in the lowerposition. This configuration guides the capillary assembly 710 onto theseal 714 further creating a seal between the conical surfaces of sourcetube 706 and capillary assembly 710 and preventing unwanted leaks fromthe source tube chamber 704. During plasma operation, the process gaspasses through filter 711, then into capillary tube 419 with flowrestrictor 418.

As shown in FIG. 8, to pump out the gas from the plasma chamber 704, theprocess gas pressure is turned off by switching off the valves on gassupplies 130A through 130D, and the pump-out valve 123 is opened. As aresult, the combined force of the pull-up spring and the gas pressurewithin the plasma chamber causes the capillary assembly 710 to move up,breaking the lower seal 714, and enabling the plasma chamber 704 to beevacuated of process gas when switching gases or to be evacuated ofdesorbed gases during bake out. Some gas is also pumped out of plasmachamber 704 through aperture 116 in source electrode 218. In otherembodiments, other moveable structures can uncover other paths betweenthe interior of plasma chamber 704 and gas supply line 104. For example,a path next to the gas inlet could be opened and closed by a moveablestructure other than the capillary assembly.

FIG. 9 shows a flow chart which describes a method for using a preferredembodiment to evacuate a process gas from an ICP ion source system.Beginning with step 902, a first process gas is supplied to the plasmachamber by opening a valve of a gas supply. In step 904, the plasmalocated within the plasma chamber is ignited. Upon ignition, in step906, ions are extracted from the plasma chamber. After the ions havebeen extracted, the gas supply valve is closed in step 907 and theplasma is extinguished in step 908. In step 910, the openable gaspassage is opened to evacuate the chamber of the first process gas. Thefirst gas is pumped out in step 912. After completely evacuating theprocess gas, the openable gas passage is closed. If, after step 914, theprocess has completed, then work stops. Otherwise, a new process gas maynow be introduced into the plasma chamber, as in step 902. The newprocess may be the first process gas, or a second process gas which maydiffer from the first process gas. The openable gas valve is also openedduring bake-out to speed removal of contaminants. The openable gas valveconnects the interior of the plasma chamber to a pump through a pathhaving a gas conductance higher than that of either the source apertureor gas inlet restrictor. The pump preferably can evacuate the plasmachamber in less than 15 minutes, more preferably in less than 10 minutesand most preferably in less than 5 minutes.

While specific locations and seals for alternate gas paths have beendescribed as examples, the invention is not limited to any particularlocation for the alternate gas path or any particular type of device toexpose and seal the alternative gas path. Moreover, the invention is notlimited to a plasma ion source, but can also apply to, for example, aplasma electron source.

Although the present invention and its advantages have been described indetail, it should be understood that various changes, substitutions andalterations can be made herein without departing from the spirit andscope of the invention as defined by the appended claims. Moreover, thescope of the present application is not intended to be limited to theparticular embodiments of the process, machine, manufacture, compositionof matter, means, methods and steps described in the specification. Asone of ordinary skill in the art will readily appreciate from thedisclosure of the present invention, processes, machines, manufacture,compositions of matter, means, methods, or steps, presently existing orlater to be developed that perform substantially the same function orachieve substantially the same result as the corresponding embodimentsdescribed herein may be utilized according to the present invention.Accordingly, the appended claims are intended to include within theirscope such processes, machines, manufacture, compositions of matter,means, methods, or steps.

1. An inductively-coupled plasma ion source, comprising: a plasmachamber for maintaining a plasma; a gas line conduit for providing gasto the plasma chamber; an aperture through which ions are extracted fromthe plasma chamber; and a valve for selectively increasing the gasconductance from the plasma chamber, the valve being placed in a firstposition during operation and being in a second position for morerapidly removing gas from the plasma chamber.
 2. The inductively-coupledplasma ion source of claim 1 in which the valve comprises a closeableopening at the same end of the plasma chamber as the source electrode.3. The inductively-coupled plasma ion source of claim 2 in which thevalve comprises an opening in the source electrode that can be coveredby displaceable member.
 4. The inductively-coupled plasma ion source ofclaim 3 in which the member is displaced by an electric field or amagnetic field.
 5. The inductively-coupled plasma ion source of claim 4in which the electric field is provided by a voltage supplied by aplasma electrode voltage supply or by an extraction electrode voltagesupply.
 6. The inductively-coupled plasma ion source of claim 1 in whichthe valve comprises a closeable opening at the same end of the plasmachamber as the gas inlet.
 7. The inductively-coupled plasma ion sourceof claim 6 in which the valve includes a moveable structure that in afirst position forms a seal and that in a second position allows gas topass into the plasma chamber.
 8. The inductively-coupled plasma ionsource of claim 7 further comprising a capillary tube that regulates gasentering the plasma chamber and in which the moveable structure supportsthe capillary tube.
 9. The inductively-coupled plasma ion source ofclaim 6 in which a portion of the gas inlet is displaceable to seal orunseal the plasma chamber.
 10. The inductively coupled plasma the ionsource of claim 6 in which a gas pressure differential opposes andovercomes a biasing force to maintain the moveable structure in a sealedposition during operation.
 11. The inductively coupled plasma ion sourceof claim 10 in which the biasing force opens the valve when the plasmasource is being evacuated without requiring manually moving the valve.12. The inductively coupled plasma ion source of claim 10 in which aspring provides the biasing force.
 13. The inductively coupled plasmaion source of claim 10 in which the valve includes a labyrinth seal. 14.The inductively coupled plasma ion source of claim 1 further comprisinga biasing means to automatically open the valve when the plasma chamberis being pumped out.
 15. A method of evacuating a process gas from anICP ion source system, comprising: providing a ICP ion source systemhaving; an evacuable plasma chamber; a gas inlet including a flowrestrictor for supplying gas to the plasma chamber; an aperture throughwhich ions are extracted from the plasma chamber; and a selectivelyopenable gas passage from the plasma chamber, the selectively openablegas passage being other than through the flow restrictor and theaperture; providing a process gas from a first gas source into theplasma chamber; igniting a plasma in the plasma chamber; extracting ionsfrom the plasma chamber through the aperture in the source electrode;extinguishing the plasma in the plasma chamber; opening the openable gaspassage; and pumping the gas from the plasma through the openablepassage.
 16. The method of claim 15 further comprising, after pumpingthe plasma through the openable passage, closing the openable passage;providing a second process gas into the plasma chamber through the gasinlet including a flow restrictor; and igniting a plasma in the plasmachamber.
 17. The method of claim 15 in which opening the openable gaspassage comprises the uncovering of a hole in the source aperture. 18.The method of claim 15 in which opening the openable gas passagecomprises the moving of the gas inlet to unseal a passage.
 19. Themethod of claim 18 in which opening the openable gas passage comprisesautomatically opening the gas inlet to unseal a passage when gas isbeing pumped out through the gas supply lines.